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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9443774 B1

PDFFull Text
Date of Patent:
Sep. 13, 2016

Filed:

Apr. 08, 2014

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Tomonori Mizushima, Matsumoto, JP;

Yusuke Kobayashi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:

Jarrett Stark

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/10 (2006.01); H01L 21/66 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/263 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 22/30 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66128 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/8611 (2013.01); H01L 29/0619 (2013.01);
Abstract

A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an nsemiconductor substrate. The donor layer has an impurity concentration distribution including a portion with the maximum impurity concentration and a portion with a concentration gradient in which the impurity concentration is reduce to the same impurity concentration as that of the n-type drift layer in a direction from the portion with the maximum impurity concentration to both surfaces of the n-type drift layer. The crystal defect formed in the n-type drift layer is a composite crystal defect mainly caused by a vacancy, oxygen, and hydrogen.

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