The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Aug. 05, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Tae Sun Kim, Hwaseong-si, KR;

Jaekyung Seo, Yongin-si, KR;

Kwangsub Yoon, Yongin-si, KR;

Yura Kim, Seoul, KR;

Yeojin Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); H01L 21/426 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/0262 (2013.01); H01L 29/66795 (2013.01);
Abstract

The method may include forming a plurality of fins on a substrate with first and second regions, forming a photoresist pattern to expose the fins of the first region, forming a material layer to cover the fins of first region and the photoresist pattern, chemically reacting the photoresist pattern the material layer to form a supplemental film on a side surface of the photoresist pattern, performing an ion implantation process using the photoresist pattern and the supplemental film as a ion injection mask to form impurity layers in the fins of the first region.


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