The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

May. 06, 2013
Applicant:

Advanced Micro-fabrication Equipment Inc, Shanghai, Shanghai, CN;

Inventors:

Yousen Li, Shanghai, CN;

Steven Lee, Shanghai, CN;

David Zhehao Chen, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01K 11/00 (2006.01); H01L 21/02 (2006.01); C23C 16/46 (2006.01); G01K 11/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02104 (2013.01); C23C 16/46 (2013.01); G01K 11/00 (2013.01); G01K 11/12 (2013.01);
Abstract

A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E(λ)=T(d)×M(λ,T), where E(λ) is the ith radiant quantity corresponding to the ith wavelength λ, T(d) is transmittance of the substrate, which is a function of thickness d of a film grown on the substrate, and M(λ,T) is blackbody radiation equation, which is a function of the ith wavelength λand the substrate temperature T.


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