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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9443713 B1

PDFFull Text
Date of Patent:
Sep. 13, 2016

Filed:

Jul. 01, 2014

Oxidizing aqueous cleaner for the removal of post-etch residues

Applicant:

Advanced Technology Materials, Inc., Danbury, CT (US);

Inventors:

David W. Minsek, New Milford, CT (US);

Michael B. Korzenski, Bethel, CT (US);

Martha M. Rajaratnam, Ridgefield, CT (US);

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC., Danbury, CT (US);

Attorneys:

Tristan A. Fuierer

Moore & Van Allen, PLLC

Maggie Chappuis

Primary Examiner:

Gregory Webb

Int. Cl.
CPC ...
C11D 3/20 (2006.01); H01L 21/02 (2006.01); C09G 1/02 (2006.01); C23G 1/06 (2006.01); C23G 1/10 (2006.01); C23G 1/18 (2006.01); C23G 1/20 (2006.01); G03F 7/42 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); C11D 11/00 (2006.01); C11D 7/06 (2006.01); C11D 7/32 (2006.01); C11D 3/33 (2006.01); C11D 3/39 (2006.01); C23G 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); C09G 1/02 (2013.01); C11D 7/06 (2013.01); C11D 7/3209 (2013.01); C11D 11/0047 (2013.01); C23G 1/061 (2013.01); C23G 1/103 (2013.01); C23G 1/106 (2013.01); C23G 1/18 (2013.01); C23G 1/205 (2013.01); G03F 7/425 (2013.01); H01L 21/02063 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/32134 (2013.01); C11D 3/33 (2013.01); C11D 3/3942 (2013.01); C23G 1/02 (2013.01); G03F 7/426 (2013.01);
Abstract

An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

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