The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Dec. 20, 2013
Applicant:

Sandisk Enterprise Ip Llc, Milpitas, CA (US);

Inventors:

Mark Dancho, Chandler, AZ (US);

James Fitzpatrick, Sudbury, MA (US);

Li Li, Wellesley, MA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G11C 16/34 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0616 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/3495 (2013.01); G06F 2212/7211 (2013.01);
Abstract

The embodiments described herein methods and devices that enhance the endurance of a non-volatile memory (e.g., flash memory). The method includes obtaining, for each of the plurality of die, an endurance metric. The method also includes sorting the plurality of die into a plurality of die groups based on their corresponding endurance metrics, where each die group includes one or more die and each die group is associated with a range of endurance metrics. In response to a write command specifying a set of write data, the method further includes writing the write data to the non-volatile memory by writing in parallel subsets of the write data to the one or more die assigned to a single die group of the plurality of die groups.


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