The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Mar. 27, 2014
Honeywell International Inc., Morristown, NJ (US);
Donald Horkheimer, Minneapolis, MN (US);
Honeywell International Inc., Morris Plains, NJ (US);
Abstract
An ion sensor apparatus comprises at least one ion sensitive field effect transistor (ISFET) device configured to be exposed to a liquid, a reference electrode configured to contact the liquid to which the ISFET device is exposed, and at least one magnet configured to intermittently expose the ISFET device to a magnetic field. A processor is operatively connected to the ISFET device and the reference electrode. The processor modulates the magnetic field to produce a corresponding modulated output in resistance of the ISFET device, and modulation of a reported output value of the ion sensor apparatus.