The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Nov. 10, 2014
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Zhenan Bao, Stanford, CA (US);
Mark E. Roberts, Albuquerque, NM (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
A sensor includes an organic thin-film transistor (OTFT) that operates under low voltage conditions in an aqueous environment. According to an example embodiment, an OTFT includes an organic channel that electrically connects source and drain electrodes, with a gate electrode separated from the channel by a dielectric layer. The channel, gate and dielectric layer are arranged to facilitate switching of the channel region to pass current between the source and drain electrodes, in response to a low voltage applied to the gate electrode, when the channel is exposed to an aqueous solution. The current that is passed is indicative of characteristics of the aqueous solution, and is used to characterize the same. For various implementations, the low voltage operation of the sensor facilitates such characterization with substantially no ionic conduction through an analyte in the aqueous solution.