The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Sep. 24, 2013
Applicant:

Endress + Hauser Gmbh + Co. KG, Maulburg, DE;

Inventors:

Igor Getman, Lorrach, DE;

Rafael Teipen, Berlin, DE;

Thomas Link, Rottweil, DE;

Peter Nommensen, Villingen-Schwenningen, DE;

Assignee:

Endress + GmbH + Co. KG, Maulburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/12 (2006.01); G01L 9/00 (2006.01); G01L 13/02 (2006.01); G01L 19/06 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0072 (2013.01); B81B 3/0027 (2013.01); B81C 1/00531 (2013.01); G01L 9/0073 (2013.01); G01L 13/025 (2013.01); G01L 19/0618 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81C 1/00158 (2013.01); B81C 1/00396 (2013.01);
Abstract

A pressure difference sensor includes a measuring membrane, which is arranged between two platforms and connected pressure-tightly with the platforms, in each case, via a first insulating layer for forming pressure chambers between the platforms and the measuring membrane. The insulating layer is especially silicon oxide, wherein the pressure difference sensor further includes an electrical transducer for registering a pressure dependent deflection of the measuring membrane. The platforms have support positions, against which the measuring membrane lies at least partially in the case of overload, wherein the support positions have position dependent heights, characterized in that the support positions are formed in the first insulating layer by isotropic etching, and the particular height h of a support position, in each case, is a function of a distance from a base of the support position in the reference plane.


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