The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Feb. 12, 2013
Osaka University, Suita-shi, Osaka, JP;
Nippon Kayaku Kabushiki Kaisha, Chiyoda-ku, Tokyo, JP;
Yoshihiro Kobayashi, Suita, JP;
Ryota Negishi, Suita, JP;
Shoji Koriyama, Suita, JP;
Shogo Agata, Suita, JP;
Kazuki Fujimoto, Suita, JP;
Michiharu Arifuku, Tokyo, JP;
Masaki Shinmoto, Tokyo, JP;
Masahiro Imaizumi, Tokyo, JP;
Noriko Kiyoyanagi, Tokyo, JP;
Osaka University, Osaka, JP;
Nippon Kayaku Kabushiki Kaisha, Tokyo, JP;
Abstract
Problem To provide a process for producing single-walled carbon nanotubes with which highly pure, high-quality single-walled carbon nanotubes can be produced with high efficiency, and to provide a transparent conductive film using the single-walled carbon nanotubes obtained by that production method. Solution A process for producing single-walled carbon nanotubes by chemical vapor deposition (CVD), wherein particles of a nonmetallic material containing 500 ppm or lower of metallic impurities including metals and compounds thereof are used as growth nuclei; and after a growth gas is introduced into a furnace used for growing carbon nanotubes, the growth gas used in an initial stage of growth of carbon nanotubes and the growth gas used in a stage of growth of regular carbon nanotubes (stationary growth stage) thereafter are prepared to different compositions and different partial pressures.