The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Mar. 11, 2013
Applicants:

Board of Trustees of Michigan State University, East Lansing, MI (US);

Aisin Aw Co. Ltd., Anjo, Aichi, JP;

Inventors:

Fang Zheng Peng, Okemos, MI (US);

Junming Zhang, Hangzhou, CN;

Zhiqian Chen, Brighton, GB;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/60 (2006.01); H03K 17/16 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H03K 17/60 (2013.01); H03K 17/0826 (2013.01); H03K 17/166 (2013.01); H03K 17/168 (2013.01);
Abstract

An improved gate drive circuit is provided for a power device, such as a transistor. The gate driver circuit may include: a current control circuit; a first secondary current source that is used to control the switching transient during turn off of the power transistor and a second secondary current source that is used to control the switching transient during turn on of the power transistor. In operation, the current control circuit operates, during turn on of the power transistor, to source a gate drive current to a control node of the power transistor and, during turn off of the power transistor, to sink a gate drive current from the control node of the power transistor. The first and second secondary current sources adjust the gate drive current to control the voltage or current rate of change and thereby the overshoot during the switching transient.


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