The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 10, 2014
Applicant:
The Hong Kong University of Science and Technology, Kowloon, HK;
Inventors:
Johnny Kin On Sin, Kowloon, HK;
Xianda Zhou, New Territories, HK;
Assignee:
The Hong Kong University of Science and Technology, Kowloon, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H03K 17/567 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H01L 29/0834 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
The subject disclosure presents power semiconductor devices, and methods for manufacture thereof, with a low on-state voltage drop and a low turn-off energy. In an aspect, a power semiconductor device is provided that embodies a normally off trench gate-controlled p-i-n switch with a charge trapping material in the gate dielectric and a self-depleted channel.