The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Jul. 23, 2013
Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventors:

Alberto Guerra, Palos Verdes Estates, CA (US);

Ahmed Masood, Redondo Beach, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H02M 3/158 (2006.01); H02M 7/538 (2007.01); H03K 17/08 (2006.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); H02M 7/538 (2013.01); H03K 17/08 (2013.01);
Abstract

In one implementation, a power converter includes an output stage integrated circuit (IC) on a group III-V die, and a driver IC for driving the output stage IC, the driver IC fabricated on a group IV die. The power converter also includes a composite power switch split between the group III-V die and the group IV die, wherein a depletion mode group III-V transistor of the composite power switch is monolithically integrated in the group III-V die, and a group IV control switch of the composite power switch is monolithically integrated in the group IV die. As a result, the depletion mode group III-V transistor may be operated as an enhancement mode transistor.


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