The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Mar. 11, 2013
Applicant:

Defense Electronics Corporation, Pinellas Park, FL (US);

Inventor:

Stephan P. Athan, Tampa, FL (US);

Assignee:

DEFENSE ELECTRONICS CORPORATION, Pinellas Park, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/087 (2006.01); H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
H02H 3/087 (2013.01); H02H 9/001 (2013.01);
Abstract

Methods, apparatus, and integrated circuits that provide radiation hardening through chip level integrated recovery are provided. The apparatus may include first and second circuits within a partition of an integrated circuit and a state machine configured to monitor current leakage of the first circuit while the first circuit is powered on and to power on the second circuit and power off the first circuit when the monitored first circuit current leakage exceeds a first current leakage threshold. The method may include powering a first circuit of a partition within an integrated circuit, monitoring current leakage of the first circuit while the first circuit is powered on and the second circuit is powered off, and powering off the first circuit and powering on the second circuit when the monitored first circuit current leakage exceeds a first current leakage threshold.


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