The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Apr. 01, 2014
Korea Institute of Energy Research, Daejeon, KR;
Young Joo Eo, Daejeon, KR;
Kyung Hoon Yoon, Daejeon, KR;
SeJin Ahn, Daejeon, KR;
Jihye Gwak, Daejeon, KR;
Jae Ho Yun, Daejeon, KR;
Ara Cho, Seoul, KR;
Kee Shik Shin, Daejeon, KR;
SeoungKyu Ahn, Daejeon, KR;
Jun Sik Cho, Daejeon, KR;
Jin Su Yoo, Seoul, KR;
Sang Hyun Park, Daejeon, KR;
Joo Hyung Park, Daejeon, KR;
Abstract
Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSedue to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.