The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jun. 19, 2015
Sunpower Corporation, San Jose, CA (US);
Genevieve A. Solomon, Palo Alto, CA (US);
Scott Harrington, Oakland, CA (US);
Kahn Wu, San Francisco, CA (US);
Paul Loscutoff, Castro Valley, CA (US);
Junbo Wu, San Jose, CA (US);
Steven Edward Molesa, San Jose, CA (US);
SunPower Corporation, San Jose, CA (US);
Abstract
A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (HSO), acetic acid (CHCOOH), nitric acid (HNO), hydrofluoric acid (HF) or phosphoric acid (HPO). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.