The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Mar. 12, 2015
Qutel, Inc., Columbus, OH (US);
Paul Berger, Columbus, OH (US);
QuTel, Inc., Columbus, OH (US);
Abstract
A resonant inter-band tunnel diode (RITD) can be fabricated using semiconductor processing similar to that used for Complementary Metal-Oxide-Semiconductor (CMOS) device fabrication, such as can include using silicon. A memory cell (e.g., a random access memory (RAM) cell) can be fabricated to include one or more negative differential resistance device, such as tunneling diodes, such as to provide a single-bit or multi-bit cell. In an example, a 'hybrid' memory cell can be fabricated, such as including one or more negative resistance devices, a MOS transistor structure, and a capacitor structure, such as including an integrated capacitor configuration similar to a generally-available dynamic RAM (DRAM) structure, but such as without requiring a refresh and offering a higher area efficiency.