The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Nov. 26, 2014
Applicant:
SK Innovation Co., Ltd., Seoul, KR;
Inventor:
Jun-Hyung Kim, Daejeon, KR;
Assignee:
SK INNOVATION CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 29/42324 (2013.01); H01L 29/42348 (2013.01); H01L 29/51 (2013.01); H01L 29/518 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01);
Abstract
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.
Kim, Jun-Hyung. (2016). Non-volatile memory device including charge trapping layer and method for fabricating the same (U.S. Patent No. 9437751). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9437751
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile