The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Dec. 05, 2014
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Kisul Cho, Gumi-si, KR;
Seongmoh Seo, Suwon-si, KR;
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1335 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 1/133514 (2013.01); G02F 1/134336 (2013.01); G02F 1/134363 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); G02F 2001/133519 (2013.01); G02F 2001/134372 (2013.01); G02F 2001/136222 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.