The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jan. 22, 2013
Sharp Kabushiki Kaisha, Osaka, JP;
Yuhichi Saitoh, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
The present invention provides a semiconductor device which is provided with an oxide semiconductor TFT that can be reduced in the parasitic capacitance by suppressing process damage to a channel, while reducing the channel length (L). A semiconductor device of the present invention is provided with: a gate electrode () that is provided on a substrate (); a first insulating layer () that is formed on the gate electrode (); an island-shaped oxide semiconductor layer () that is formed on the first insulating layer (); a source electrode () and a drain electrode () that are electrically connected to the oxide semiconductor layer (); and a protective layer () that covers the upper surface of the oxide semiconductor layer (). The source electrode () and/or the drain electrode () is arranged on a portion of the side faces of the oxide semiconductor layer () and a portion of the side faces of the protective layer (), but does not cover the upper face of the protective layer ().