The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Mar. 23, 2015
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventors:
Hidenobu Fukutome, Kawasaki, JP;
Tomohiro Kubo, Kawasaki, JP;
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/76264 (2013.01); H01L 29/045 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/41758 (2013.01); H01L 29/66636 (2013.01); H01L 21/26513 (2013.01); H01L 21/30608 (2013.01);
Abstract
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.