The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jul. 20, 2015
Kwan-young Kim, Seoul, KR;
Jae-hyun Yoo, Suwon-si, KR;
Jin-hyun Noh, Seoul, KR;
Woo-yeol Maeng, Gunpo-si, KR;
Yong-woo Jeon, Seoul, KR;
Kwan-Young Kim, Seoul, KR;
Jae-Hyun Yoo, Suwon-si, KR;
Jin-Hyun Noh, Seoul, KR;
Woo-Yeol Maeng, Gunpo-si, KR;
Yong-Woo Jeon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.