The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jan. 08, 2007
Applicant:
Jian LI, Palo Alto, CA (US);
Inventor:
Jian Li, Palo Alto, CA (US);
Assignee:
Vishay-Siliconix, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/306 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/41741 (2013.01); H01L 29/7806 (2013.01); H01L 21/30625 (2013.01); H01L 29/456 (2013.01); H01L 2224/05624 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A method for producing a power MOSFET. The method includes fabricating a plurality of layers of a power MOSFET to produce an upper surface active area and performing a chemical mechanical polishing process on the active area to produce a substantially planar surface. A metalization deposition process is then performed on the substantially planar surface and the fabrication of the power MOSFET is subsequently completed.