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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9437726 B1

PDFFull Text
Date of Patent:
Sep. 06, 2016

Filed:

May. 16, 2014

Field effect transistor

Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Tetsuzo Nagahisa, Osaka, JP;

Shinichi Handa, Osaka, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Osaka, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Hung Vu

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1029 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/7786 (2013.01); H01L 29/1079 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/518 (2013.01);
Abstract

In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than 0.8×10/cmand not more than 1.0×10/cm, a carbon concentration in the high resistance layer at the side closer to the buffer layer is not less than 3.7×10/cmand not more than 1.0×10/cm, and a carbon concentration in the high resistance layer at the side closer to the channel layer is not less than 1.4×10/cmand not more than 1.0×10/cm.

Find Patent Forward Citations

Nagahisa, Tetsuzo. (2016). Field effect transistor (U.S. Patent No. 9437726). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9437726

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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