The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
May. 16, 2014
Applicant:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Inventors:
Tetsuzo Nagahisa, Osaka, JP;
Shinichi Handa, Osaka, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1029 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/7786 (2013.01); H01L 29/1079 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/518 (2013.01);
Abstract
In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than 0.8×10/cmand not more than 1.0×10/cm, a carbon concentration in the high resistance layer at the side closer to the buffer layer is not less than 3.7×10/cmand not more than 1.0×10/cm, and a carbon concentration in the high resistance layer at the side closer to the channel layer is not less than 1.4×10/cmand not more than 1.0×10/cm.