The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 09, 2014
Applicants:
Stmicroelectronics (Tours) Sas, Tours, FR;
Universite Francois Rabelais, Tours, FR;
Inventors:
Samuel Menard, Tours, FR;
Gael Gautier, Veretz, FR;
Assignees:
STMicroelectronics (Tours) SAS, Tours, FR;
Universite Francois Rabelais, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/747 (2006.01); H01L 29/87 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/747 (2013.01); H01L 29/0615 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01); H01L 29/66386 (2013.01); H01L 29/87 (2013.01);
Abstract
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.