The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jul. 20, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Makoto Wada, Yokohama, JP;
Yuichi Yamazaki, Inagi, JP;
Akihiro Kajita, Yokohama, JP;
Atsunobu Isobayashi, Yokohama, JP;
Tatsuro Saito, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); B82Y 30/00 (2011.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); C01B 31/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); B82Y 30/00 (2013.01); H01L 23/528 (2013.01); H01L 23/53276 (2013.01); C01B 31/0453 (2013.01); H01L 2924/0002 (2013.01); Y10S 977/734 (2013.01); Y10S 977/932 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.