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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9437704 B1

PDFFull Text
Date of Patent:
Sep. 06, 2016

Filed:

Feb. 23, 2015

Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Sadayoshi Horii, Toyama, JP;

Arito Ogawa, Toyama, JP;

Hideharu Itatani, Toyama, JP;

Assignee:

HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Tucker J Wright

Int. Cl.
CPC ...
H01L 29/49 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/45529 (2013.01); H01L 21/28088 (2013.01); H01L 21/28194 (2013.01); H01L 28/75 (2013.01); H01L 29/517 (2013.01); H01L 21/7687 (2013.01); H01L 23/5223 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.

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