The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 27, 2014
Weize Chen, Phoenix, AZ (US);
Richard J. DE Souza, Chandler, AZ (US);
MD M. Hoque, Gilbert, AZ (US);
Patrice M. Parris, Phoenix, AZ (US);
Weize Chen, Phoenix, AZ (US);
Richard J. de Souza, Chandler, AZ (US);
Md M. Hoque, Gilbert, AZ (US);
Patrice M. Parris, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Integrated circuit devices with counter-doped conductive gates. The devices have a semiconductor substrate that has a substrate surface. The devices also have a first well of a first conductivity type, a source of a second conductivity type, and a drain of the second conductivity type. A channel extends between the source and the drain. A conductive gate extends across the channel. The conductive gate includes a first gate region and a second gate region of the second conductivity type and a third gate region of the first conductivity type. The third gate region extends between the first and second gate regions. The devices further include a gate dielectric that extends between the conductive gate and the substrate and also include a silicide region in electrical communication with the first, second, and third gate regions. The methods include methods of manufacturing the devices.