The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Mar. 31, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Denso Corporation, Kariya-shi, Aichi, JP;
Seiji Momota, Nagano, JP;
Hitoshi Abe, Nagano, JP;
Kenji Kouno, Gifu, JP;
Hiromitsu Tanabe, Nagoya, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
DENSO CORPORATION, Kariya-shi, JP;
Abstract
A fabrication method of a semiconductor device that includes trench gate structures each having a gate electrode extending in a depth-direction of an element, where first trench gate structures contribute to controlling the element and second trench gate structures do not contribute. The fabrication method includes forming the trench gate structures on a front face of a semiconductor substrate; forming on the front face, an electrode pad connected to the gate electrode of at least one trench gate structure; executing screening by applying a predetermined voltage between the electrode pad and an electrode portion having a potential other than a gate potential, to apply the predetermined voltage to gate insulator films in contact with each gate electrode connected to the electrode pad; and forming the second trench gate structures having the gate electrodes connected to the electrode pad, by short-circuiting the electrode portion to the electrode pad after executing screening.