The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Mar. 17, 2015
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Nayera Ahmed, Crolles, FR;
François Roy, Seyssins, FR;
Assignee:
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/763 (2013.01); H01L 21/76202 (2013.01); H01L 21/76205 (2013.01); H01L 21/76224 (2013.01); H01L 21/76227 (2013.01); H01L 21/76229 (2013.01);
Abstract
A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.