The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 30, 2014
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To provide a semiconductor device having a photoelectric conversion element having a high sensitivity, causing less blooming, and capable of providing a highly reliable image. The semiconductor device has a semiconductor substrate, a first p type epitaxial layer, a second p type epitaxial layer, and a first photoelectric conversion element. The first p type epitaxial layer is formed over the main surface of the semiconductor substrate. The second p type epitaxial layer is formed so as to cover the upper surface of the first p type epitaxial layer. The first photoelectric conversion element is formed in the second p type epitaxial layer. The first and second p type epitaxial layers are each made of silicon and the first p type epitaxial layer has a p type impurity concentration higher than that of the second p type epitaxial layer.