The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Apr. 17, 2015
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Myounggeun Cha, Yongin, KR;

Dongjo Kim, Yongin, KR;

Yoonho Khang, Yongin, KR;

Myounghwa Kim, Yongin, KR;

Kyoungwon Lee, Yongin, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01); H01L 29/78675 (2013.01); H01L 29/78678 (2013.01);
Abstract

A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.


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