The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Aug. 15, 2013
Applicants:
Kwangmin Park, Seoul, KR;
Byongju Kim, Seoul, KR;
Jumi Yun, Pocheon-si, KR;
Jaeyoung Ahn, Seongnam-si, KR;
Inventors:
Kwangmin Park, Seoul, KR;
Byongju Kim, Seoul, KR;
Jumi Yun, Pocheon-si, KR;
Jaeyoung Ahn, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8239 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11556 (2013.01); H01L 29/42332 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01);
Abstract
A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer.