The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Apr. 14, 2015
Applicant:

Powerchip Technology Corporation, Hsinchu, TW;

Inventors:

Cheng-Yuan Hsu, Hsinchu, TW;

Tzung-Hua Ying, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); G11C 16/0433 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 21/28008 (2013.01); H01L 21/28273 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 29/42328 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract

A method of making a flash memory includes providing a substrate. Then, a first insulating layer, a first conductive layer and a second insulating layer are formed to cover the substrate. Later, a first trench is formed in the first conductive layer and the second insulating layer. After that, a second conductive layer and a mask layer are formed to cover the second insulating layer, and the second conductive layer fills up the first trench. Then, the mask layer are patterned to form patterned mask layers. Subsequently, a spacer is formed on the sidewall of the patterned mask layer. Then, an etching process is carried out by using the patterned mask layers and the spacer as a mask so as to form a first gate structure and a second gate structure.


Find Patent Forward Citations

Loading…