The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 30, 2014
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Hiroyuki Ogawa, Nagoya, JP;
Junichi Ariyoshi, Mie, JP;
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Abstract
A semiconductor device manufacturing method includes: forming a first well of the first conductivity type in a substrate; forming a second well of the first conductivity type in a first region of the substrate; forming a third well of the second conductivity type underneath the second well in the first region of the substrate in a position overlapping with the first well located underneath the second well in the first region of the substrate; forming a fourth well, that surrounds the second well and has the second conductivity type, in the first region of the substrate; forming a fifth well of the first conductivity type above the first well in the second region of the substrate; and forming a sixth well of the second conductivity type above the first well in the second region of the substrate.