The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jul. 22, 2013
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Tetsuhiro Tanaka, Isehara, JP;
Yoshinori Ieda, Fuchu, JP;
Toshiyuki Miyamoto, Kanuma, JP;
Masafumi Nomura, Tochigi, JP;
Takashi Hamochi, Shimotsuga, JP;
Kenichi Okazaki, Tochigi, JP;
Mitsuhiro Ichijo, Zama, JP;
Toshiya Endo, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.