The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Sep. 09, 2015
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Karuna Nidhi, Patna, IN;

Federico Agustin Altolaguirre, Zhubei, TW;

Ming-Dou Ker, Jhubei, TW;

Geeng-Lih Lin, Jhudong Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 27/092 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 27/0635 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 29/1095 (2013.01);
Abstract

A cross-domain electrostatic protection device having four embedded silicon controlled rectifiers (a QSCR structure) embedded in a single cell. Two grounded-gate NMOS transistors are embedded into the cross-domain electrostatic protection device for reducing trigger voltage of the QSCR structure. Furthermore, an external trigger circuit and a bias circuit are applied to the cross-domain electrostatic protection device to reduce trigger voltage of the QSCR structure and leakage current.


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