The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Nov. 12, 2015
Imec Vzw, Leuven, BE;
IMEC VZW, Leuven, BE;
Abstract
A method is provided for fabricating a semiconductor device that includes providing a structure with a sacrificial layer having at least one through-hole exposing a metal surface and, optionally, an oxide surface. In one example, the method may include applying a self-assembled monolayer selectively on the exposed metal surface and/or on the oxide surface. The method may also include growing a metal on the self-assembled monolayer and on the exposed metal surface if no self-assembled monolayer is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal structure. The method may further include replacing the first sacrificial layer by a replacement dielectric layer having a dielectric constant of at most 3.9.