The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Aug. 26, 2014
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Hideyuki Kamata, Kanagawa, JP;
Toshifumi Minami, Kanagawa, JP;
Teppei Higashitsuji, Kanagawa, JP;
Atsuhiro Sato, Tokyo, JP;
Keisuke Yonehama, Kanagawa, JP;
Yasuyuki Baba, Kanagawa, JP;
Hiroshi Shinohara, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); H01L 27/115 (2006.01); G11C 16/04 (2006.01); G11C 5/02 (2006.01); G11C 16/12 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 5/025 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/3459 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract
A semiconductor memory device includes first and second memory cell transistors, first and second word lines electrically connected to the first and second memory cell transistors, respectively, first and second transfer transistors. The first and second transistors are electrically connected to the first and second word lines, respectively. The sizes of the first transistor and the second transistor are different.