The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 02, 2012
Microchip Technology Incorporated, Chandler, AZ (US);
Joseph Julicher, Maricopa, AZ (US);
Keith Curtis, Gilbert, AZ (US);
Paul N. Katz, Bellaire, TX (US);
MICROCHIP TECHNOLOGY INCORPORATED, Chandler, AZ (US);
Abstract
An ion chamber provides a current representative of its characteristics as affected by external conditions, e.g., clean air or smoke. A direct current (DC) voltage is applied to the ion chamber at a first polarity and the resulting current through the ion chamber and parasitic leakage current is measured at the first polarity, then the DC voltage is applied to the ion chamber at a second polarity opposite the first polarity, and the resulting current through the ion chamber and parasitic leakage current is measured at the second polarity. Since substantially no current flows through the ion chamber at the second polarity, the common mode parasitic leakage current contribution may be removed from the total current measurement by subtracting the current measured at the second polarity from the current measured at the first polarity, resulting in just the current through the ion chamber.