The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Oct. 21, 2014
Applicant:

Stmicroelectronics (Shenzhen) R&d Co. Ltd, Shenzhen, CN;

Inventor:

Yong Feng Liu, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/20 (2006.01); G05F 3/26 (2006.01); G05F 1/46 (2006.01); G05F 3/24 (2006.01);
U.S. Cl.
CPC ...
G05F 3/267 (2013.01); G05F 1/463 (2013.01); G05F 3/242 (2013.01);
Abstract

A reference current path carries a reference current. A first transistor is coupled to the reference current path. A second transistor is also coupled to the reference current path. The first and second transistors are connected in parallel to carry the reference current. The first transistor is biased by a first voltage (which is a bandgap voltage plus a threshold voltage). The second transistor is biased by a second voltage (which is a PTAT voltage plus a threshold voltage). The first and second transistors are thus biased by voltages having different and opposite temperature coefficients with a result that the temperature coefficients of the currents flowing in the first and second transistors are opposite and the reference current accordingly has a low temperature coefficient.


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