The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Nov. 21, 2014
Applicant:
Novatek Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Wei-Ta Chiu, New Taipei, TW;
Assignee:
NOVATEK Microelectronics Corp., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); G02F 1/133 (2006.01); H03F 3/30 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133 (2013.01); G02F 1/13306 (2013.01); H03F 3/3022 (2013.01); H03F 3/45179 (2013.01); H03F 3/45183 (2013.01); H03F 2200/366 (2013.01); H03F 2203/45154 (2013.01); H03F 2203/45702 (2013.01);
Abstract
An operational amplifier comprises a first metal-oxide-semiconductor field effect transistor (MOSFET), comprising a first drain, a first gate and a first source; a second MOSFET, comprising a second drain, a second gate and a second source, the second source coupled to the first source of the first MOSFET; and a bias source, coupled between a first specific level and the first source of the first MOSFET and the second source of the second MOSFET; wherein the first MOSFET and the second MOSFET are depletion-type.