The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Nov. 30, 2015
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Maryse Fournier, Saint Martin d'Uriage, FR;
Daivid Fowler, Saint Martin le Vinoux, FR;
Edouard Grellier, Grenoble, FR;
Lorenzo Iotti, St Martin d'Heres, FR;
Abstract
The invention relates to a method for manufacturing a waveguide () including a semiconducting junction (). The method comprises the following steps: providing a support () comprising a semiconducting layer () having a first part () of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part () of the semiconducting layer () adjacent to the first part (). The concentration of second conductivity-type dopants in the second part () is greater than the one of first conductivity-type dopants in the first part (). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part () to form a semiconducting junction () in the first part (), and partially etching the semiconducting layer () to form the waveguide () in the first part (), the protection of the first part () being used so that the semiconducting junction () is included in the waveguide ().