The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Aug. 16, 2010
Method for measuring a semiconductor structure, which is a solar cell or a precursor of a solar cell
Applicants:
Jonas Haunschild, Freiburg, DE;
Stefan Rein, Denzlingen, DE;
Markus Glatthaar, Freiburg, DE;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); G01N 21/95 (2006.01); H02S 50/10 (2014.01); G01N 21/66 (2006.01); G06F 17/00 (2006.01); G03F 7/20 (2006.01); G01N 15/14 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01N 21/9501 (2013.01); H02S 50/10 (2014.12); G01N 21/66 (2013.01); G01N 2015/1479 (2013.01); G03F 7/2008 (2013.01); G06F 17/00 (2013.01);
Abstract
A method is provided for measuring a semiconductor structure, which allows the spatially resolved determination of dark saturation current and/or series resistance and/or resistance of the emitter layer of the semiconductor structure via luminescence measurement, without restrictions being given such that one of the parameters must be known in advance or spatially consistent.