The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Mar. 17, 2015
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Takahiko Yoshizawa, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81B 7/02 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00246 (2013.01); B81B 2201/0271 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0163 (2013.01); B81C 2203/0764 (2013.01);
Abstract

A MEMS device includes a semiconductor substrate having a main surface with a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed; a functional element provided, either directly or via an insulating film, on a bottom surface of the trench of the semiconductor substrate; a wall portion in the trench of the semiconductor substrate and forming a cavity surrounding the functional element; a lid portion that covers the cavity; and a pillar in the cavity and in contact with either the bottom surface of the trench of the semiconductor substrate or the insulating film, and with a back surface of the lid portion.


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