The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Oct. 22, 2013
Applicant:

Ushio Denki Kabushiki Kaisha, Tokyo, JP;

Inventor:

Takahiro Shirai, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 41/30 (2006.01); H05G 2/00 (2006.01); H01J 61/06 (2006.01);
U.S. Cl.
CPC ...
H05B 41/30 (2013.01); H01J 61/06 (2013.01); H05G 2/003 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01);
Abstract

Each of two discharge electrodes is partially immersed in a container, and rotations of the electrode cause a high-temperature plasma material adhering to the electrode to be conveyed into a discharge space. EUV light is emitted by generating a pulse discharge between the electrodes in a state where the high-temperature plasma material is vaporized. A plurality of capturing grooves for capturing the high-temperature plasma material are provided in the form of a plurality of concentric circles near the outer periphery of each discharge electrode. When each discharge electrode rotates, the high-temperature plasma material, which adheres to an area unnecessary for plasma generation, flows into the capturing grooves. As a result, the film thickness of the high-temperature plasma material does not increase very much at the outer periphery of each electrode, and it is possible to suppress the scattering of the high-temperature plasma material into a chamber interior.


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