The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Jan. 14, 2016
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Shigenori Isozaki, Tatsuno, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 1/66 (2006.01); H03B 5/02 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03M 1/66 (2013.01); H01L 27/0629 (2013.01); H03B 5/02 (2013.01);
Abstract

A D/A conversion circuit includes a plurality of resistors connected to each other in series, a plurality of MOS transistors connected to each other so as to correspond to a plurality of contacts, and a plurality of dummy electrodes respectively disposed on sides opposite to the plurality of MOS transistors with a resistive element interposed therebetween when seen in a plan view of a semiconductor substrate. Each of the dummy electrodes is set to be in a second potential state when a gate electrode of the MOS transistor disposed on a side opposite thereto with the resistive element interposed therebetween is in a first potential state, and is set to be in a first potential state when the gate electrode of the MOS transistor is in a second potential state.


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