The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Feb. 18, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Nobuo Suzuki, Kamakura, JP;

Masaki Tohyama, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/12 (2006.01); H01S 5/10 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/065 (2006.01); H01S 5/343 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1231 (2013.01); H01S 5/1032 (2013.01); H01S 5/1237 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/0422 (2013.01); H01S 5/0654 (2013.01); H01S 5/124 (2013.01); H01S 5/2224 (2013.01); H01S 5/34306 (2013.01); H01S 2301/166 (2013.01);
Abstract

A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.


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