The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Dec. 02, 2014
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Hiroyuki Yamaguchi, Fukushima, JP;

Hiroshi Horiuchi, Fukushima, JP;

Kenichi Kawase, Fukushima, JP;

Tadahiko Kubota, Kanagawa, JP;

Hideki Nakai, Fukushima, JP;

Takakazu Hirose, Fukushima, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 6/00 (2006.01); H01M 4/134 (2010.01); H01M 4/13 (2010.01); H01M 4/139 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/485 (2010.01); H01M 10/0567 (2010.01); H01M 10/0569 (2010.01); H01M 10/058 (2010.01); H01M 4/131 (2010.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); H01M 4/13 (2013.01); H01M 4/139 (2013.01); H01M 4/366 (2013.01); H01M 4/38 (2013.01); H01M 4/485 (2013.01); H01M 10/058 (2013.01); H01M 10/0567 (2013.01); H01M 10/0569 (2013.01); H01M 4/131 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01); H01M 2300/0028 (2013.01); H01M 2300/0034 (2013.01); Y02E 60/122 (2013.01); Y02P 70/54 (2015.11);
Abstract

An anode active material including anode active material particles including silicon, tin, or both and at least partially coated with an oxide-containing film including an oxide of silicon, germanium, tin, or a combination of them formed by a liquid-phase method such as a liquid-phase deposition method. A region of the particles in contact with the electrolytic solution is covered with the oxide-containing film, to thereby improve the chemical stability of the anode and the charge-discharge efficiency. The thickness of the oxide-containing film is preferably within a range from 0.1 nm to 500 nm both inclusive.


Find Patent Forward Citations

Loading…