The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Sep. 28, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Tae-Jin Park, Yongin-si, KR;

Yoon-Jong Song, Seoul, KR;

Chil-Hee Chung, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1683 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1286 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01);
Abstract

A phase change memory device includes a phase change memory unit and a heat sink. The phase change memory unit includes a phase change material layer pattern, a lower electrode beneath the phase change material layer pattern configured to heat the phase change material layer pattern, and an upper electrode on the phase change material layer pattern. The heat sink configured to absorb heat from the phase change memory unit. The heat sink has a top surface lower than a top surface of the upper electrode and is spaced apart from the phase change memory unit.


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