The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Sep. 26, 2007
Applicants:
Volker Härle, Laaber, DE;
Christine Höss, Regensburg, DE;
Alfred Lell, Maxhütte-Haidhof, DE;
Uwe Strauss, Bad Abbach, DE;
Inventors:
Volker Härle, Laaber, DE;
Christine Höss, Regensburg, DE;
Alfred Lell, Maxhütte-Haidhof, DE;
Uwe Strauss, Bad Abbach, DE;
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01S 5/028 (2006.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01S 5/0282 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01); H01S 5/0287 (2013.01); H01S 2301/176 (2013.01);
Abstract
A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.